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2SC3991 - Silicon NPM Power Transistor

General Description

High Switching Speed High Breakdown Voltage- : V(BR)CBO= 800 V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for switching regulator applications.

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isc Silicon NPN Power Transistor isc Product Specification 2SC3991 DESCRIPTION ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 800 V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 300 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.