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2SC3992 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3992 isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3992 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

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