Datasheet Details
| Part number | 2SC4196 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.02 KB |
| Description | Silicon NPN Transistor |
| Datasheet | 2SC4196-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4196.
| Part number | 2SC4196 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.02 KB |
| Description | Silicon NPN Transistor |
| Datasheet | 2SC4196-InchangeSemiconductor.pdf |
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·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF local oscillator.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4196 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC4196 | Silicon NPN Transistor | Hitachi Semiconductor |
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