Datasheet4U Logo Datasheet4U.com

2SC4197 - Silicon NPN Transistor

General Description

Low Noise High Gain Bandwidth Product 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4197 Silicon NPN Transistor Hitachi Semiconductor
2SC4196 Silicon NPN Transistor Hitachi Semiconductor
2SC4100 NPN Silicon Transistor ROHM
2SC4102 Silicon Transistor GME
2SC4102 High-voltage Amplifier Transistor Rohm

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC4196 Silicon NPN Transistor
2SC4134 Silicon NPN Power Transistor
2SC4135 Silicon NPN Power Transistor
2SC4148 Silicon NPN Power Transistors
2sc4159 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4197 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for UHF frequency converter, wide band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 13 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.