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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4245
DESCRIPTION ·High Current-Gain Bandwidth Product
fT= 2400MHz TYP. @VCE = 10 V, IC = 2 mA ·Low Noise ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·TV tuner , UHF mixer applications ·VHF~UHF band RF amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
50
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
25
mA
0.1
W
125
℃
Tstg
Storage Temperature Range
-55~125
℃
isc website:www.iscsemi.