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2SC4247 - Silicon NPN RF Transistor

General Description

fT= 4 GHz TYP.

Low Noise 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV tuner , UHF oscillator applications.

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4247 DESCRIPTION ·High Current-Gain Bandwidth Product fT= 4 GHz TYP. @VCE = 10 V, IC = 10 mA ·Low Noise ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV tuner , UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website:www.iscsemi.