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2SC4368 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage : VCEO= 150V(Min) Complement to Type 2SA1657 Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RAT

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4368 DESCRIPTION ·Collector-Emitter Breakdown Voltage : VCEO= 150V(Min) ·Complement to Type 2SA1657 ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃ TJ Junction Temperature Tstg Storage Temperature 0.5 A 20 W 2 150 ℃ -55~150 ℃ isc Website：www.iscsemi.