Datasheet Details
| Part number | 2SC4430 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.94 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SC4430-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4430.
| Part number | 2SC4430 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.94 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SC4430-InchangeSemiconductor.pdf |
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·NPN triple diffused planar silicon transistor ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 12 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 65 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4430 CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
IB= 1.2A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC4430 | NPN Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SC4442 | Silicon NPN Power Transistor |
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| 2SC4003 | Silicon NPN Power Transistor |
| 2SC4005 | Silicon NPN Transistor |
| 2SC4007 | Silicon NPN Power Transistor |
| 2SC4027 | Silicon NPN Power Transistor |
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| 2SC4135 | Silicon NPN Power Transistor |