Datasheet Details
| Part number | 2SC4442 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.92 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4442_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4442.
| Part number | 2SC4442 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.92 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4442_InchangeSemiconductor.pdf |
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· ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.6 A 2 W 45 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4442 CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
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