| Part number | 2SC4461 |
|---|---|
| Datasheet | 2SC4461-InchangeSemiconductor.pdf |
| File Size | 225.79 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4461 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC4461 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
See all Inchange Semiconductor datasheets
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| 2SC4001 | Silicon NPN Power Transistor |
| 2SC4003 | Silicon NPN Power Transistor |
| 2SC4005 | Silicon NPN Transistor |
| 2SC4007 | Silicon NPN Power Transistor |
| 2SC4027 | Silicon NPN Power Transistor |
| 2SC4134 | Silicon NPN Power Transistor |
| 2SC4135 | Silicon NPN Power Transistor |
