2SC4574 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA ICBO Collector Cutoff Current VCB= 40V;.
