2SC4603R Overview
·High Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
2SC4603R datasheet by Inchange Semiconductor.
| Part number | 2SC4603R |
|---|---|
| Datasheet | 2SC4603R_InchangeSemiconductor.pdf |
| File Size | 190.43 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·High Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC4603 | NPN TRANSISTOR | Fuji Electric |
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2SC4603 | TRIPLE DIFFUSED PLANER TYPE TRANSISTOR | New Jersey Semi-Conductor |
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