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2SC4742 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4742.

General Description

·High Breakdown Voltage- : VCES= 1500V (Min) ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A IC(peak) Collector Current-Peak 7 A IC(surge) Collector Current-Surge 16 A ID C-E Diode Forward Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4742 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA ;

IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;

IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;

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