Datasheet4U Logo Datasheet4U.com

2SC4757 - Silicon NPN Power Transistor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Horizontal deflection output for high resolution display.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4754 NPN TRANSISTOR Toshiba Semiconductor
2SC4755 NPN TRANSISTOR Panasonic Semiconductor
2SC4755 Silicon NPN Transistor Guangdong Kexin
2SC4702 NPN TRANSISTOR Hitachi Semiconductor
2SC4702 NPN Transistor Renesas

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC4758 Silicon NPN Power Transistor
2SC4759 Silicon NPN Power Transistor
2SC4742 Silicon NPN Power Transistors
2SC4766 Silicon NPN Transistor
2SC4001 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 7 A ICP Collector Current-Pulse 14 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.