2SC4766 datasheet by Inchange Semiconductor.
| Part number | 2SC4766 |
|---|---|
| Datasheet | 2SC4766-InchangeSemiconductor.pdf |
| File Size | 192.16 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Transistor |
|
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·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for medium resolution display. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA.
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