2SC4807
DESCRIPTION
- High Gain-Bandwidth Product f T= 4.4 GHz TYP.
- High Output Power
1 d B Power pression point Pcp = 24 d Bm TYP. @ VCE = 5V , IC = 100 m A , f = 900 MHz
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for VHF ~ UHF wide band amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE=...
