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2SC4807 - Silicon NPN Transistor

General Description

fT= 4.4 GHz TYP.

1 dB Power compression point Pcp = 24 dBm TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designe

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4807 DESCRIPTION ·High Gain-Bandwidth Product fT= 4.4 GHz TYP. ·High Output Power 1 dB Power compression point Pcp = 24 dBm TYP. @ VCE = 5V , IC = 100 mA , f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF ~ UHF wide band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.2 A 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.