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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4807
DESCRIPTION ·High Gain-Bandwidth Product
fT= 4.4 GHz TYP. ·High Output Power
1 dB Power compression point Pcp = 24 dBm TYP. @ VCE = 5V , IC = 100 mA , f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for VHF ~ UHF wide band amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.2
A
0.8
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.