Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
- High Switching Speed
- Minimum Lot-to-Lot variations for robust device performance and reliable...
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SC5027 | NPN TRANSISTOR | |
Unisonic Technologies |
2SC5027 | NPN SILICON TRANSISTOR |
Nell Power Semiconductor |
2SC5027 | Silicon NPN Transistor |
LZG |
2SC5027 | SILICON NPN TRANSISTOR |
Unisonic Technologies |
2SC5027E | HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR |