2SC5027 Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) - High Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 50 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC5027 Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVEBO Emitter -Base Breakdown Voltage IE= 1mA; IC= 0 7 V BVCEO Collector- Emitter Breakdown Voltage IC= 5mA; IB= 0 800 V BVCBO Collector- Base Breakdown Voltage IC= 1mA; IE= 0 1100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE1 DC Current Gain IC= 0.2A; VCE= 5V 10 40 hFE2 DC Current Gain IC= 1A; VCE= 5V 8 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 60 pF fT Current-Gain-Bandwidth Product IE= 0.2A; VCE= 10V 12 MHz hFE1 ： N： 10 ~ 20 R：15 ~ 30 O： 20 ~ 40 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
