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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC5090
DESCRIPTION ·High Gain Bandwidth Product
fT = 10 GHz TYP. ·High Gain, Low Noise Figure
︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
10
V
VEBO
Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
40
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
20
mA
0.1
W
125
℃
Tstg
Storage Temperature Range
-55~125
℃
isc website：www.iscsemi.
2SC5090 Datasheet
