Datasheet Details
| Part number | 2SC5099 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.64 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SC5099_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5099.
| Part number | 2SC5099 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.64 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SC5099_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1907 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5099 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.2A ICBO Collector Cutoff Current VCB= 80V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5099 | NPN TRANSISTOR | Sanken electric |
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