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2SC5116 - Silicon NPN Transistor

General Description

High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Ba

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5116 DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Current-Peak Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 8A 40 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W isc Website：www.iscsemi.