2SC5116 Overview
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;.
Datasheet Details
| Part number | 2SC5116 |
|---|---|
| Datasheet | 2SC5116-InchangeSemiconductor.pdf |
| File Size | 186.47 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Transistor |
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