Datasheet Details
| Part number | 2SC5144 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.04 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5144-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC5144 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.04 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5144-InchangeSemiconductor.pdf |
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·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1700V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5144 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 11A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5144 | NPN TRANSISTOR | Toshiba Semiconductor |
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