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2SC5227 - Silicon NPN Transistor

General Description

fT = 7 GHz TYP.

High Gain, Low Noise Figure ︱S21e︱2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF~UHF wideband low

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5227 DESCRIPTION ·High Gain Bandwidth Product fT = 7 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF~UHF wideband low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 70 mA 0.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.