Datasheet Details
| Part number | 2SC5252 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.50 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5252-InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC5252 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.50 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5252-InchangeSemiconductor.pdf |
|
|
|
·High speed switching High breakdown voltage VCBO = 1500 V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5252 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC5252 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5252 | NPN TRANSISTOR | Hitachi Semiconductor |
| Part Number | Description |
|---|---|
| 2SC5218 | Silicon NPN Transistor |
| 2SC5227 | Silicon NPN Transistor |
| 2SC5241 | Silicon NPN Power Transistors |
| 2SC5265 | Silicon NPN Power Transistor |
| 2SC5296 | Silicon NPN Power Transistors |
| 2SC5027 | Silicon NPN Transistor |
| 2SC5047 | Silicon NPN Transistor |
| 2SC5064 | Silicon NPN Transistor |
| 2SC5084 | Silicon NPN Transistor |
| 2SC5086 | Silicon NPN Transistor |