Datasheet Details
| Part number | 2SC5265 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.05 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5265-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC5265 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.05 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5265-InchangeSemiconductor.pdf |
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·High Breakdown Voltage-(Vcb=1200V) · High Reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inverter-controlled ·Lighting ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 9 V IC Collector Current- Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5265 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5265 | NPN TRANSISTOR | Sanyo Semicon Device |
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