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2SC5707 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Large current capacitance ·High-speed switching ·100% avalanche tested ·Low collector-to-emitter saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·plementary to 2SA2040 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 11 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5707 isc website：.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3.5A;

IB= 175mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.0A;

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