2SC5707 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3.5A; IB= 175mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.0A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 2.0A;.
