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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC5890
DESCRIPTION ·High Gain Bandwidth Product
fT = 7.8 GHz TYP. ·High power gain and low noise figure ;
PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in UHF ~ VHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
75
mA
0.7
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.