2SC5890
DESCRIPTION
- High Gain Bandwidth Product f T = 7.8 GHz TYP.
- High power gain and low noise figure ;
PG = 12 d B TYP., NF = 1.0 d B typ. @ f = 900 MHz
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in UHF ~ VHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
75 m A
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website：.iscsemi.cn
1 isc & iscsemi isregistered trademark isc Silicon NPN RF Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CBO Collector-Base Breakdown...
