2SC5949 - Silicon NPN Transistor

Inchange Semiconductor

General Description

High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) Complement to Type 2SA2121 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power am

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Datasheet Details

Part number	2SC5949
Manufacturer	Inchange Semiconductor
File Size	182.78 KB
Description	Silicon NPN Transistor
Datasheet	2SC5949 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5949 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Complement to Type 2SA2121 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.