2SC643 Description
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Inchange Semiconductor 2SC643 TC=25℃ unless...