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2SC790 - Silicon NPN Power Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 1.4(V)(Max)@ IC= 2A DC Current Gain- : hFE= 40-240 @ IC= 0.5A Complement to Type 2SA490 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.4(V)(Max)@ IC= 2A ·DC Current Gain- : hFE= 40-240 @ IC= 0.5A ·Complement to Type 2SA490 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC790 isc website：www.iscsemi.