2SC898 - Silicon NPN Power Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V (Min) Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 6A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for amplifier applications.

Inchange Semiconductor

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Datasheet Details

Part number	2SC898
Manufacturer	Inchange Semiconductor
File Size	185.75 KB
Description	Silicon NPN Power Transistor
Datasheet	2SC898 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V (Min) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 7 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC898 isc website：www.iscsemi.

Published: Mar 26, 2012 |