Datasheet Details
| Part number | 2SC898 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.75 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC898_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC898 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.75 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC898_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V (Min) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 7 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC898 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
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