2SC945
DESCRIPTION
- High Voltage
- Excellent h FE linearity
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Dsigned for use in driver stage of AF amplifier and low speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
VALUE
UNIT
100 m A
20 m A
250 m W
℃
-55~125
℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 100m A ; IB= 10m...
