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2SC945 - Silicon NPN Transistor

General Description

High Voltage Excellent hFE linearity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Dsigned for use in driver stage of AF amplifier and low speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base

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isc Silicon NPN Transistor DESCRIPTION ·High Voltage ·Excellent hFE linearity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Dsigned for use in driver stage of AF amplifier and low speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SC945 VALUE UNIT 60 V 50 V 5 V 100 mA 20 mA 250 mW 125 ℃ -55~125 ℃ isc website：www.iscsemi.