Datasheet4U Logo Datasheet4U.com

2SC945 Datasheet Silicon NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Transistor.

General Description

·High Voltage ·Excellent hFE linearity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Dsigned for use in driver stage of AF amplifier and low speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SC945 VALUE UNIT 60 V 50 V 5 V 100 mA 20 mA 250 mW 125 ℃ -55~125 ℃ isc website:.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor 2SC945 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA ;

IB= 10mA MIN TYP.

MA X UNI T 0.15 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC= 100mA ;

2SC945 Distributor