2SCR542D
Description
DC Current Gain hFE :200-500@ IC= 0.5A - Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min) - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SCR542D
- Description: Silicon NPN Power Transistors
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 264.13 KB