| Part number | 2SCR542D |
|---|---|
| Datasheet | 2SCR542D-InchangeSemiconductor.pdf |
| File Size | 264.13 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
|
|
·DC Current Gain hFE :200-500@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SCR542D | Midium Power Transistors | ROHM |
|
2SCR542F3 | Middle Power Transistors | ROHM |
|
2SCR542P | Middle Power Transistors | ROHM |
|
2SCR542PFRA | NPN Transistor | ROHM |
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