Datasheet Details
| Part number | 2SCR542D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 264.13 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
 2SCR542D Datasheet
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| Part number | 2SCR542D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 264.13 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
2SCR542D Datasheet
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·DC Current Gain hFE :200-500@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous 5.0 A ICM Collector Current-Pulse PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 10 A 10 W 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 12.5 ℃/W 2SCR542D isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A;
isc Silicon NPN Power Transistors.
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2SCR542PFRA | NPN Transistor | ROHM |
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