2SCR572D Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SCR572D TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=100uA BVCEO Collector-Emitter breakdown voltage IC=1mA BVEBO Emitter-Base breakdown voltage IE=100uA VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 100mA ICBO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff...
