Datasheet Details
| Part number | 2SCR573D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.52 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SCR573D Download (PDF) |
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| Part number | 2SCR573D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.52 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SCR573D Download (PDF) |
|
|
|
·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)=0.35V@(IC=1A,IB=50mA) ·Complementary NPN types:2SAR573D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SCR573D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SCR573D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=100uA BVCEO Collector-Emitter breakdown voltage IC=1mA BVEBO Emitter-Base breakdown voltage IE=100uA VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
IB= 50mA ICBO Collector Cutoff Current VCB= 50V;
IE= 0 IEBO Emitter Cutoff Current VEB= 4V;
isc Silicon NPN Power Transistor.
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