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2SCR586D Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤0.3V@(IC=2A,IB=100mA) ·Complementary NPN types:2SAR586D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SCR586D isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SCR586D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=100uA BVCEO Collector-Emitter breakdown voltage IC=1mA BVEBO Emitter-Base breakdown voltage IE=100uA VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;

IB= 100mA ICBO Collector Cutoff Current VCB= 80V;

IE= 0 IEBO Emitter Cutoff Current VEB= 4V;

Overview

isc Silicon NPN Power Transistor.