| Part number | 2SD1071 |
|---|---|
| Datasheet | 2SD1071-InchangeSemiconductor.pdf |
| File Size | 213.72 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Transistor |
|
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1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VZ Zener Voltage IZ= 0.1mA V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 15mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1071 | POWER TRANSISTOR | Fuji |
 |
2SD1071 | NPN EPITAXIAL SILICON TRANSISTOR | Unisonic Technologies |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD103 | Silicon NPN Power Transistors |
| 2SD1032 | Silicon NPN Power Transistor |
| 2SD1044 | Silicon NPN Darlington Power Transistor |
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |
| 2SD1118 | Silicon NPN Power Transistor |
| 2SD1126 | Silicon NPN Darlington Power Transistor |
| 2SD1127 | Power Transistor |
| 2SD1141 | Power Transistor |
| 2SD1154 | Silicon NPN Power Transistor |
