| Part number | 2SD1126 |
|---|---|
| Datasheet | 2SD1126_InchangeSemiconductor.pdf |
| File Size | 209.24 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1126 | NPN TRANSISTOR | Hitachi Semiconductor |
 |
2SD1126 | Silicon NPN Transistor | Renesas |
|
2SD1126K | NPN TRANSISTOR | Hitachi Semiconductor |
|
2SD1126K | Silicon NPN Transistor | Renesas |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1127 | Power Transistor |
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |
| 2SD1118 | Silicon NPN Power Transistor |
| 2SD1141 | Power Transistor |
| 2SD1154 | Silicon NPN Power Transistor |
| 2SD1157 | Silicon NPN Power Transistor |
| 2SD1162 | Silicon NPN Darlington Power Transistor |
| 2SD1170 | Power Transistor |
| 2SD1171 | Silicon NPN Transistor |
