| Part number | 2SD1126 |
|---|---|
| Download | 2SD1126 Datasheet (PDF) |
| File Size | 209.24 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
2SD1126 | NPN TRANSISTOR |
Renesas |
2SD1126 | Silicon NPN Transistor |
|
Hitachi Semiconductor |
2SD1126K | NPN TRANSISTOR |
|
Renesas |
2SD1126K | Silicon NPN Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
