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2SD1162 - Silicon NPN Darlington Power Transistor

General Description

High DC Current Gain- : hFE= 400(Min.)@IC= 2A High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

use.

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isc Silicon NPN Darlington Power Transistor 2SD1162 DESCRIPTION ·High DC Current Gain- : hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Base Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 40 W 1.