| Part number | 2SD1162 |
|---|---|
| Datasheet | 2SD1162_InchangeSemiconductor.pdf |
| File Size | 214.38 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
|
|
hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, low speed switching industrial use. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...
See all Inchange Semiconductor datasheets
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| 2SD1117 | Silicon NPN Power Transistor |
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| 2SD1126 | Silicon NPN Darlington Power Transistor |
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| 2SD1141 | Power Transistor |
| 2SD1154 | Silicon NPN Power Transistor |
| 2SD1157 | Silicon NPN Power Transistor |
| 2SD1170 | Power Transistor |
| 2SD1171 | Silicon NPN Transistor |
