Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1500V (Min)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 4.0V(Max.)@ IC= 2.5A
- Built-in Damper Diode
- Wide area of safe operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for horizontal deflection output...
