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2SD1173 - Silicon NPN Transistor

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Part number 2SD1173
Manufacturer Inchange Semiconductor
File Size 198.80 KB
Description Silicon NPN Transistor
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Description

High Breakdown Voltage- : VCBO= 1500V (Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 3.0A Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications.

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