2SD1245 datasheet by Inchange Semiconductor.
| Part number | 2SD1245 |
|---|---|
| Datasheet | 2SD1245-InchangeSemiconductor.pdf |
| File Size | 208.64 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;.
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