High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
High DC Current Gain
: hFE= 500(Min) @IC= 2A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general purpose amplifier and Motor control
ABSOLUTE MAXIMUM
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High DC Current Gain
: hFE= 500(Min) @IC= 2A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and Motor control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
500
V
400
V
5
V
6
A
10
A
40
W
150
℃
-55~150 ℃
2SD1245
isc website：www.iscsemi.
2SD1245 Datasheet
