2SD1245
Description
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) - High DC Current Gain : hFE= 500(Min) @IC= 2A - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD1245
- Description: Silicon NPN Power Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 208.64 KB