Datasheet Details
| Part number | 2SD1245 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.64 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1245-InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1245 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.64 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1245-InchangeSemiconductor.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 500 V 400 V 5 V 6 A 10 A 40 W 150 ℃ -55~150 ℃ 2SD1245 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
IB= 0 V(BR)EBO Emitter -Base Breakdown Voltage IE= 5mA;
| Part Number | Description |
|---|---|
| 2SD1248 | Power Transistor |
| 2SD1233 | Power Transistor |
| 2SD1269 | Silicon NPN Transistor |
| 2SD1298 | Silicon NPN Transistor |
| 2SD103 | Silicon NPN Power Transistors |
| 2SD1032 | Silicon NPN Power Transistor |
| 2SD1044 | Silicon NPN Darlington Power Transistor |
| 2SD1071 | Silicon NPN Transistor |
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |