Datasheet Details
| Part number | 2SD1351 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.21 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD1351-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1351.
| Part number | 2SD1351 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.21 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD1351-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.5 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1351 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1351 | NPN Complementary Silicon Power Transistors | Thinki Semiconductor |
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|---|---|
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