2SD1351 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage-.
2SD1351 is Silicon NPN Power Transistors manufactured by Inchange Semiconductor .
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage-.