Datasheet Details
| Part number | 2SD1485 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.61 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1485_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1485.
| Part number | 2SD1485 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.61 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1485_InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1054 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 3 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1485 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 3A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1485 | Silicon NPN Transistor | Panasonic Semiconductor |
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