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2SD1509 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor 2SD1509.

General Description

·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC=1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature 0.5 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website: .iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A, IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A, IB= 1mA ICBO Collector Cutoff Current VCB= 80V, IE= 0 IEBO Emitter Cutoff Current VEB=8V;

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