Download 2SD1509 Datasheet PDF
Inchange Semiconductor
2SD1509
DESCRIPTION - High DC Current Gain- : h FE = 2000(Min)@ IC= 1A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC=1A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature 10...