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2SD1516 - Silicon NPN Transistor

General Description

Low Collector Saturation Voltage Good Linearity of hFE High Switching Speed High IC Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier ,power switching applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·High IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ,power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 1.4 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1516 isc website：www.iscsemi.