2SD1516
DESCRIPTION
- Low Collector Saturation Voltage
- Good Linearity of h FE
- High Switching Speed
- High IC
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier ,power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current -Continuous
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
1.4 W
℃
Tstg
Storage Temperature
-55~150 ℃
2SD1516 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
