High Collector Current:: IC= 2.0A
Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 500mA
Complement to Type 2SB1096
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power supplies or a variety of drives in
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current:: IC= 2.0A ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 500mA ·Complement to Type 2SB1096 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power supplies or a variety of drives in audio
and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
2.0
A
ICM
Collector Current-Peak
3.0
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.0
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1587
isc website：www.
2SD1587 Datasheet
