| Part number | 2SD1604 |
|---|---|
| Datasheet | 2SD1604_InchangeSemiconductor.pdf |
| File Size | 211.14 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·plement to Type 2SB1104 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1604 | NPN Transistor | Hitachi Semiconductor |
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| 2SD1601 | Power Transistor |
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| 2SD1605 | Power Transistor |
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| 2SD1640 | Silicon NPN Power Transistor |
| 2SD1646 | Power Transistor |
| 2SD1653 | Power Transistor |
| 2SD1656 | Power Transistor |
| 2SD1662 | Silicon NPN Power Transistor |
