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2SD1683 - Silicon NPN Power Transistor

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High Collector Current-IC= 4A Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 2A Complement to Type 2SB1143 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in voltage regulations, relay drivers, lamp driver

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Datasheet Details

Part number 2SD1683
Manufacturer Inchange Semiconductor
File Size 213.08 KB
Description Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 4A ·Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 2A ·Complement to Type 2SB1143 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in voltage regulations, relay drivers, lamp drivers and electrical equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 1.5 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1683 isc website:www.
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