Datasheet Details
| Part number | 2SD1683 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.08 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD1683 Download (PDF) |
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| Part number | 2SD1683 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.08 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD1683 Download (PDF) |
|
|
|
·High Collector Current-IC= 4A ·Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 2A ·Complement to Type 2SB1143 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in voltage regulations, relay drivers, lamp drivers and electrical equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 1.5 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1683 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1683 | Bipolar Transistor | ON Semiconductor |
 |
2SD1683 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SD1684 | Silicon NPN Power Transistor |
| 2SD1601 | Power Transistor |
| 2SD1602 | Power Transistor |
| 2SD1604 | Power Transistor |
| 2SD1605 | Power Transistor |
| 2SD1606 | Silicon NPN Power Transistor |
| 2SD1608 | Power Transistor |
| 2SD1640 | Silicon NPN Power Transistor |
| 2SD1646 | Power Transistor |
| 2SD1653 | Power Transistor |