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2SD1684 - Silicon NPN Power Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -0.5A Wide Area of Safe Operation Complement to Type 2SB1144 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 100V/1.5A Switching Applications ABSOLU

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isc Silicon NPN Power Transistor DESCRIPTION ··Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -0.5A ·Wide Area of Safe Operation ·Complement to Type 2SB1144 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1684 isc website：www.iscsemi.