Datasheet Details
| Part number | 2SD1684 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.56 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1684-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1684 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.56 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1684-InchangeSemiconductor.pdf |
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··Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -0.5A ·Wide Area of Safe Operation ·plement to Type 2SB1144 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1684 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2Sd1684 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SD1683 | Silicon NPN Power Transistor |
| 2SD1601 | Power Transistor |
| 2SD1602 | Power Transistor |
| 2SD1604 | Power Transistor |
| 2SD1605 | Power Transistor |
| 2SD1606 | Silicon NPN Power Transistor |
| 2SD1608 | Power Transistor |
| 2SD1640 | Silicon NPN Power Transistor |
| 2SD1646 | Power Transistor |
| 2SD1653 | Power Transistor |