| Part number | 2SD1736 |
|---|---|
| Datasheet | 2SD1736_InchangeSemiconductor.pdf |
| File Size | 218.70 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
|
·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A;.
See all Inchange Semiconductor datasheets
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|---|---|
| 2SD1730 | Power Transistor |
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| 2SD1734 | Power Transistor |
| 2SD1735 | Power Transistor |
| 2SD1737 | Power Transistor |
| 2SD1738 | Power Transistor |
| 2SD1706 | Silicon NPN Power Transistor |
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| 2SD1711 | Silicon NPN Power Transistors |
