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2SD1736 - Power Transistor

Datasheet Summary

Description

High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal deflection output applications.

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Datasheet Details

Part number 2SD1736
Manufacturer Inchange Semiconductor
File Size 218.70 KB
Description Power Transistor
Datasheet download datasheet 2SD1736 Datasheet
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isc Silicon NPN Power Transistor 2SD1736 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2.5 A ICP Collector Current-Peak 7 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 60 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ isc website：www.iscsemi.
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